sfh6345 document number 83680 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 1 i179072 1 2 3 4 8 7 6 5 v cc nc c e nc a c nc pb p b -free e3 high speed optocoupler, 1 mbd, 15 kv/ms cmr, transistor output features ? direct replacement for hcpl4503 high speed optocoupler without base connection isolation test voltage: 5300 v rms gaalas emitter integrated detector with photo diode and transis- tor high data transmission rate: 1 mbit/s ttl compatible open collector output good ctr linearity rela tive to forward current field effect stable low coupling capacitance very high common mode transient immunity dv/dt: 15 kv/ s at v cm = 1500 v lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 applications data communications igbt drivers programmable controllers description the sfh6345 is an optocoupler with a gaalas infra- red emitting diode, optically coupled to an integrated photo detector consisting of a photo diode and a high speed transistor in a dip-8 plastic package. the device is similar to the 6n135 but has an additional faraday shield on the detector which enhances the input-output dv/dt immunity. signals can be transmitted between two electrically separated circuits up to frequencies of 2 mhz. the potential difference between the circuits to be coupled should not exceed the maximum permissible refer- ence voltages. order information for additional information on t he available options refer to option information. part remarks sfh6345 ctr 30 %, dip-8 SFH6345-X006 ctr 30 %, dip-8 400 mil (option 6) sfh6345-x007 ctr 30 %, smd-8 (option 7) sfh6345-x009 ctr 30 %, smd-8 (option 9)
www.vishay.com 2 document number 83680 rev. 1.4, 26-oct-04 vishay sfh6345 vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 3v dc forward current i f 25 ma surge forward current t p 1 s, 300 pulses/sec. i fsm 1a power dissipation p diss 45 mw parameter test condition symbol value unit supply voltage v s - 0.5 to 30 v output voltage v o - 0.5 to 25 v output current i o 8ma power dissipation p diss 100 mw parameter test condition symbol value unit isolation test voltage between emitter and detector (refer to climate din 40046, part 2, nov. 74) v iso 5300 v rms creepage 7mm clearance 7mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature t = 10 sec. max, dip soldering: distance to seating plane 1.5 mm t sld 260 c
vishay sfh6345 document number 83680 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input t amb = 0 to 70 c, unless otherwise specified, typical values t amb = 25 c output coupler current transfer ratio parameter test condition symbol min ty p. max unit forward voltage i f = 16 ma v f 1.6 1.9 v reverse current v r = 3 v i r 0.5 10 a capacitance v r = 0 v, f = 1 mhz c o 75 pf thermal resistance r thja 700 k/w parameter test condition symbol min ty p. max unit supply current, logic high i f = 0, v o = open, v cc = 15 v i cch 0.01 1 a i cch 0.01 2 a output current, output high i f = 0, v o = v cc = 5.5 v i oh .003 0.5 a i f = 0, v o = v cc = 15 v i oh .01 1 i oh 50 collector-emitter capacitance v ce = 5 v, f = 1 mhz c ce 3pf thermal resistance r thja 300 k/w parameter test condition symbol min ty p. max unit coupling capacitance c c 0.6 pf collector emitter saturation voltage i f = 16 ma, i o = 2.4 ma, v cc = 4.5 v v ol 0.1 0.4 v logic low supply current i f = 16 ma, v o = open, v cc = 15 v i ccl 80 200 a parameter test condition symbol min ty p. max unit current transfer ratio i f = 16 ma, v o = 0.4 v, v cc = 4.5 v i c /i f 19 30 % i f = 16 ma, v o = 0.5 v, v cc = 4.5 v i c /i f 15 %
www.vishay.com 4 document number 83680 rev. 1.4, 26-oct-04 vishay sfh6345 vishay semiconductors switching characteristics common mode transient immunity parameter test condition symbol min ty p. max unit propagation delay time (high- low), see fig. 1 i f = 16 ma, v cc = 5 v, r l = 1.9 k ? t phl 0.3 0.8 s propagation delay time (low- high), see fig. 1 i f = 16 ma, v cc = 5 v, r l = 1.9 k ? t plh 0.3 0.8 s figure 1. switching times (typ.) parameter test condition symbol min ty p. max unit common mode transient immunity (high), see fig. 2 i f = 0, v cm = 1500 v p-p , r l = 1.9 k ? , v cc = 5 v | cm h |15 30 kv/ s common mode transient immunity (low), see fig. 2 i f = 16 ma, v cm = 1500 v p-p , r l = 1.9 k ? , v cc = 5 v | cm l |15 30 kv/ s figure 2. common mode transient immunity isfh6345_01 v ol t t 5v 1.5 v v o i f t phl t plh v o r l 5v pulse generator z o =50 ? t r ,t f =5ns duty cycle 10% t 100 s c l =15pf i f monitor 1 2 3 4 8 7 6 5 i f 100 ? c=100 nf isfh6345_02 v cm v o v o 5v 0v v ol 90% 10% 90% 10% t f t t t a: i f =0ma t r b: i f =16ma v o r l 5v c = 0.1 f 1 2 3 4 8 7 6 5 b v cc i f a pulse generator v cm
vishay sfh6345 document number 83680 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 5 typical characteris tics (tamb = 25 c unless otherwise specified) figure 3. logic high output current vs. temperature figure 4. permissible forward led current vs. temperature figure 5. permissible power di ssipation vs. temperature isfh6345_03 1.7 1.6 1.5 1.4 1.3 20 15 10 5 0 v f - led forward voltage i f - led current in ma 25 c 75 c 0c isfh6345_04 100 80 60 40 20 0 30 20 10 0 ambient temperature in c i f led current in ma isfh6345_05 100 80 60 40 20 0 0 20 40 60 80 100 120 ambient temperature in c total power in mw detector emitter figure 6.outputcurrents.outputvoltage figure 7.outputcurrents.temperature figure 8.propagationdelays.ambienttemperature isfh6345_06 25 20 15 10 5 0 0 5 10 15 20 25 output voltage, vo (v) output current, io(ma) if=15ma if=10ma if=5ma if=40ma if=20ma if=35ma if=30ma i f =25ma (v cc = 5.0 v) isfh6345_07 8 7 6 5 4 3 2 1 0 -60 -40 -20 0 20 40 60 80 100 output current, io (ma) temperature, ta (c) if = 20ma if = 16ma if = 10ma if=2ma if=1ma @v o = 0.4 v, v cc = 5.0 isfh6345_08 900 800 700 600 500 400 300 200 100 0 -60 -40 -20 0 20 40 60 80 100 tp - propagation delay time - ns temperature, ta (c) tphl@3v tphl @ 1.5 v tplh @ 1.5 v tplh@3v @v cc = 5.0 v i f = 16 ma, r l = 1.9 k ?
www.vishay.com 6 document number 83680 rev. 1.4, 26-oct-04 vishay sfh6345 vishay semiconductors package dimensions in inches (mm) figure 9. logic high output current vs. temperature isfh6345_09 temperature, t a (c) i oh - collector current, ic (na) 100 10 1 0.1 0.01 0.001 -60 -40 -20 100 0 20 40 60 80 v cc =v o =15v v cc =v o =5v figure 10.smallsignalcurrenttransferratios.uiescentinput current isfh6345_10 0.6 0.5 0.4 0.3 0.2 0.1 0 10 15 20 25 ? i f / ? i o / small signal current transfer ratio i f /ma 5 0 (v cc = 5.0 v, r l = 100 ?) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3C9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a
vishay sfh6345 document number 83680 rev. 1.4, 26-oct-04 vishay semiconductors www.vishay.com 7 min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
www.vishay.com 8 document number 83680 rev. 1.4, 26-oct-04 vishay sfh6345 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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